Fig. 3. Photo-detection performance of the GIS devices.

a The I-V characterizations of GIS tunneling photodetector with 15.3-nm AlN comparing with the conventional graphene/n-Si heterojunction photodetector under dark and light illumination. b Time-dependent photo-response for the GIS device under −10 V and 365-nm light illumination (12.2 mW cm⁻²). c Optical power-dependent responsivity in the GIS tunneling photodetector with the comparison to the control device without tunneling layer under 365-nm light illumination at a bias of −10 V. d Spectra-dependent photocurrent responsivity of the GIS tunneling photodetector with 15.3-nm AlN tunneling layer at a bias of −10 V, comparing with the control and reference devices.