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. 2021 May 31;10:113. doi: 10.1038/s41377-021-00553-2

Fig. 5. Comparison of the photo-response for the GIS devices using different insulating materials.

Fig. 5

I-V characterizations of the three types of graphene/insulator (SiO2, Al2O3, and AlN)/silicon (GIS) photodetectors under a dark and b 365-nm light illumination (12.2 mW cm−2), with the comparison to the conventional GS heterojunction photodetector. The thickness of the insulators used in (ac) for the three types of GIS photodetectors all have been optimized to the best-performed one. c The enlarged illustration of (b) in the reverse bias region. d Tunneling layer thickness-dependent photocurrent enhancement for GIS devices with the three kinds of insulator materials.