Fig. 3. Quantifying carrier transport through analysis of CG-TC SECCM data. (a) CG-TC photocurrent images (0.65 V vs. Ag/AgI) and cross-sectional profiles obtained within basal planes of a series of exfoliated n-WSe2 nanosheets. Black dots indicate experimental data, and red lines represent finite element simulations. Sheet thickness is indicated in each image. (b) Simplified experimental geometry employed in finite element simulations. (c) Experimental r1/2 values as a function of sheet thickness and results from finite element simulations for Lxy = 2.8 µm and Lz = 5.8 nm. (d–f) Example steady-state carrier generation, potential, and carrier concentration profiles from finite element simulations. Experimental data was acquired under the same conditions as in Fig. 2. Simulation details are provided in the SI. Note the scales in (d)–(f) are highly anisotropic in order to aid visualization of the results.
