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. 2021 Jun 7;12:3351. doi: 10.1038/s41467-021-23744-2

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© The Author(s) 2021

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Fig. 4 — a (Top) Schematics of three consecutive processes of deposit-and-removal protein nanowires in a memristor structure. (Bottom) Corresponding memristive status in the device in each stage. b Average V_th (N = 6) in the three activated stages (i.e., deposited with protein nanowires). c Circuit diagram of a reconfigurable artificial neuron, with its threshold voltage (V_th) for neuronal firing modulable by activating different paths of memristor arrays (M). d Measured V_th (N = 6) in the artificial neuron with different paths of memristor arrays activated. The error bars in the future represent the standard deviation (s.d.).