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. 2021 Jan 25;13:62. doi: 10.1007/s40820-020-00578-z

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© The Author(s) 2021

Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a J–V curves of co-evaporated MASnBr₃ films with different hole transport materials. b Sn 3d and c Br 3d XPS results of MASnBr₃ films as-deposited and after 1 h stored in air. d Fabrication of sequential method for MASnBr₃ films. Reproduced with permission from Ref. [77]. e J–V curves of CsSnI₃-based PSCs incorporated with different ratios of SnF₂. f J–V curves of 20 mol % SnF₂-doped CsSnI₃ devices showing no hysteresis. g IPCE spectrum for 20 mol % SnF₂-doped CsSnI₃ devices. Reproduced with permission from Ref. [71]