Table 3.
Photovoltaic parameters of PSCs based on double perovskite A2B(I)B(III)X6 absorbers
| Absorber | Method for preparing perovskite film | Device architecture | Voc (V) | Jsc (mA cm−2) | FF (%) | PCE (%) | References |
|---|---|---|---|---|---|---|---|
| Cs2AgBiBr6 | Spin coating | c-TiO2/m-TiO2/perovskite/spiro-MeOTAD/Au | 0.98 | 3.93 | 63 | 2.43 | [187] |
| Cs2AgBiBr6 | Low-pressure-assisted solution processing under ambient conditions | SnO2/Cs2AgBiBr6/P3HT/Au | 1.04 | 1.78 | 78 | 1.44 | [188] |
| Cs2AgBiBr6 | Antisolvent dropping technology and post-annealing process | Cu-NiO/Cs2AgBiBr6/C60/BCP/Ag | 1.00 | 3.23 | 68.4 | 2.21 | [189] |
| Cs2AgBiBr6 | Sequential vapor deposition method | c-TiO2/perovskite/P3HT/Au | – | – | – | 1.37 | [191] |
| Cs2AgBiBr6 | Spin coating deposition and annealing at high temperature | c-TiO2/m-TiO2/perovskite/PTAA/Au | 1.02 | 1.84 | 67 | 1.26 | [190] |
| Cs2AgBiBr6 | Spin coating deposition and annealing at high temperature | c-TiO2/m-TiO2/perovskite/PCPDTBT/Au | 0.71 | 1.67 | 57 | 0.68 | [190] |
| Cs2AgBiBr6 | Spin coating deposition and annealing at high temperature | c-TiO2/m-TiO2/perovskite/spiro-MeOTAD/Au | 0.64 | 2.45 | 57 | 0.90 | [190] |
| Cs2NaBiI6 | Spin coating | c-TiO2/m-TiO2/perovskite/spiro-MeOTAD/Au | 0.47 | 1.99 | 44 | 0.42 | [194] |