Table 1.
Summary of waveguide-integrated Si/2DM PDs
| Structure | λ | Mechanism | Responsivity | |Bias voltage| | Bandwidtha | Refs. |
|---|---|---|---|---|---|---|
| M-G-M | ~1.35 μm | PV | 0.2 A W−1 | 0.5 V | – | 106 |
| BOL | 0.67 A W−1 | |||||
| M-G-M | ~1.55 μm | PV | 7–50b mA W−1 | 0 V | 3–110 GHz | 107–111 |
| 57–108 mA W−1 | 1 V | |||||
| 360 mA W−1 | 2.2 V | |||||
| M-G-M | ~1.55 μm | PTE | 35–78 mA W−1 | 0 V | 12–67 GHz | 60,112–117 |
| 3.5–90 V W−1 | ||||||
| M-G-M | ~1.55 μm | BOL | 90–500 mA W−1 | 0.3–0.4 V | 40–110 GHz | 58,119 |
| M-G-M | ~2 μm | BOL | 45–70 mA W−1 | 0.3 V | 20 GHz | 58 |
| M-G-M | ~3.8 μm | No stated | 2.2 mA W−1 | 1 V | – | 160 |
| M-MoTe2-M | ~1.16 μm | PV | 4.8 mA W−1 | 0 V | 200 MHz | 64 |
| M-MoTe2-M | ~1.55 μm | PC | 468 mA W−1 | 2 V | 35 MHz | 70 |
| M-PtSe2-M | ~1.55 μm | PC | 12 mA W−1 | 8 V | 35 GHz | 121 |
| M-BP-M | ~1.55 μm | PV | 135–657 mA W−1 | 0.4–2 V | 3 GHz | 71 |
| M-BP-M | ~1.55 μm | PC | 6.25 A W−1 | 0.7 V | 150 MHz | 161 |
| M-BP-M | 3.68 μm | PG | 0.7–23 A W−1 | 1 V | – | 68 |
| 4 μm | 0.5–2 A W−1 | |||||
| M-BP-M | ~3.825 μm | PG | 0.1–11.31 A W−1 | 0.5 V | 550 Hz | 69 |
| M-BP-M | 2 μm | PV | 0.026–0.307 A W−1 | 0.4 V | 0.5–1.33 GHz | 72 |
| MoTe2-G | ~1.31 μm | PV; PC | 23–400 mA W−1 | 3 V | 0.5 GHz | 89 |
| MoTe2-G | 1.26–1.34 μm | PV; PC | ~ 7–150 mA W−1 | 0.6 V | 12–46 GHz | 90 |
| G-hBN-G | ~1.55 μm | DT; F-N tunneling | 240 mA W−1 | 10 V | 28 GHz | 123 |
| G-Si | 2.75 μm | IPE | 0.13 A W−1 | 1.5 V | – | 98 |
| Au-G-Si | ~1.55 μm | IPE | 85 mA W−1 | 1 V | – | 99 |
| G-Si | ~1.55 μm | IPE | 11 mA W−1 | 0 V | >50 GHz | 122 |
PV photovoltaic, IPE internal photon emission, DT direct tunneling, F-N tunneling, Fowler-Nordheim (F-N) tunneling, PC photoconductive, PG Photo-gating, BOL bolometric, PTE photo-thermoelectric.
aThe measured bandwidths may be setup limited.
bIn ref. 107, the graphene has two or three layers.