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. 2021 Jun 10;12:3527. doi: 10.1038/s41467-021-23871-w

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — I–V characteristics of dimer-Cs₃Sb₂I₉ RSM before and after application of (a) set pulse (6 V, 20 ns) and (b) reset pulse (−6 V, 20 ns). c Resistance changes of dimer-Cs₃Sb₂I₉ RSM device with different pulse widths. Amplitudes of applied voltage pulses are fixed for set (6 V) and reset (−6 V) processes. d Resistance changes of dimer-Cs₃Sb₂I₉ RSM and layer-Cs₃Sb₂I₉ RSM devices by application of set pulses (6 V) with different pulse widths. ΔR is defined as the ratio between initial resistance and changed resistance after pulse application.