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. 2021 Jun 11;12:3572. doi: 10.1038/s41467-021-23798-2

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — a Schematic structure of fully stretchable transistors fabricated with our polymer semiconductors. Carbon nanotubes (CNTs) were used for source, drain, and gate electrodes. Polydimethylsiloxane (PDMS) was used for substrates and dielectrics. b Mobility change of DPP-0TVT, 8TVT, and 10TVT under strain. DPP-8TVT showed significantly greater mobility retention under strain. Error bars represent SD. c Mobility of DPP-8TVT under 100% strain compared with those of stretchable semiconducting polymers measured in stretchable transistors reported in the literature. Mobility of DPP-8TVT after repeated strain compared with the same value of stretchable semiconducting polymers measured in stretchable transistors reported in the literature in the direction d parallel and e perpendicular to strain. f Photos of the fully stretchable transistors under various mechanical deformations. g Mobility of the fully stretchable transistors after the mechanical deformations. Error bars represent SD.