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. 2021 Jun 18;12:3733. doi: 10.1038/s41467-021-23436-x

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a Assembly of hBN/SLG/hBN. b Stack placement on photonic circuit and interface cleaning. c hBN etching in SF₆ plasma. d SLG etching in O₂ plasma to define channel geometry. e Metallization (Cr/Au) for drain-source contacts. f Al seed layer evaporation and ALD of Al₂O₃. g Wet transfer of CVD SLG. h Split-gate fabrication. i Metallization (Cr/Au) for gate contacts.