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. 2021 Jun 18;12:3733. doi: 10.1038/s41467-021-23436-x

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a False-colour SEM image of our GPD, showing Cr/Au contacts (yellow), Si WG (green), contacted hBN/SLG/hBN (blue, dashed line under contacts), and SLG gates (red). Scale bar: 2 μm. b Resistance map demonstrating independent tunability of charge carrier concentration in the SLG channel via V_G1 and V_G2. c Electrical characterization at homogeneous channel doping (solid lines, measured data; dashed lines, model). d Calculated S based on the electrical data in c. e, f) Resistance vs. inverse carrier concentration for e electron and f hole doping. g Photoresponse at zero bias on resonance (λ = 1555.87 nm). h Frequency response. The 3-dB cutoff frequency, marked by intersecting dashed lines, is ~12 GHz.