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. 2021 Jun 22;12:3822. doi: 10.1038/s41467-021-24102-y

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a, b Scanning tunneling microscope (STM) images of annealing induced vacancies in the top and bottom sulfur layer. The STM imaging parameters were tip bias V_bias = 450 mV, tunneling current I_t = 100 pA. c, d Density functional theory (DFT) calculations of 7 × 7 supercell containing one sulfur vacancy. The image displays a constant height slice 4.5 Å above and below the MoS₂ layer corresponding to the charge density from sulfur vacancies in the top and bottom sulfur layer, respectively. e, f STM images of He-ion (HIM) induced top and bottom sulfur vacancies. g, h Atomic force microscopy (AFM) images of the top and bottom sulfur vacancies. The centers of the circles highlight the position of the vacancy defect. The pictogram indicates the sulfur lattice (yellow dots).