Figure 1.

(a) PCE of perovskite device with the stack ITO/SnO₂/perovskite/spiro‐OMeTAD/Au fabricated from RT‐aged TC‐mixed (DMF/DMSO) solutions. (b) J‐V curves and (c) stabilized power output for the best performing devices from RT‐aged solutions. (d) PCE of devices fabricated from low‐temperature‐aged solutions, with (e) J‐V curves and (f) stabilized power output for the best performing cells. Full J‐V sweep parameters for (b) and (e) and all device data for boxplots in (a) and (d) are given in Tables S2 and S3.