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. 2021 Jul 5;10:138. doi: 10.1038/s41377-021-00577-8

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Schematic of the Ti/Ge/Ti absorber with periodic square top resonators. In this design, l = 0.8 μm, p = 2 μm and h = 0.5 μm. The thickness of the top Ti layer is 22 nm, and the bottom Ti layer is 120 nm, where is thicker than its penetration depth. b SEM images of the fabricated Ti/Ge/Ti absorber. c Schematic of different resonant modes and equivalent RLC circuit of the Ti/Ge/Ti unit cell. d Simulated and experiment absorption spectra of the Ti/Ge/Ti absorber