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. 2021 Jun 17;24(7):102734. doi: 10.1016/j.isci.2021.102734

Figure 3.

Figure 3

Angular dependence of TCs under E-fields

(A–E) The applied magnetic field was set at rotation angles of (A) Φ = 5°, (B) 30°, (C) 55°, (D) 80°, and (E) 90°. The MTJ was initially set in an antiparallel configuration. In E, the dashed arrows indicate the switching process near the switching field with the assistance of in situ E-fields.

(F) Schematic of the high- and low-resistance states those are reversibly switched: (left panel) solely with an H-field of +29 and −29 Oe (left panel); (right panel) with a smaller H-field of +12 and −12 Oe and under the assistance of an E-field of 6 kV/cm.