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. 2021 Jul 3;14(13):3733. doi: 10.3390/ma14133733

Figure 6.

Figure 6

The TEM images of the Si epitaxial films obtained after wet pre-cleaning and subsequent H2 bake at various temperatures. (a) 700 °C for 10 min, (bd) 750, 800, 850 °C for 5 min.