Table 1.

Quantum Dot Properties.

	Heterostructureb	PLmax (nm)	FWHM (nm)	ε400c (M−1 cm−1)	Radiusd (nm)	ΦCHCL3e (%)	ΦH2Oe (%)	BH2Of x103
D1	CdxZn1-xSeyS1-y	510	30	170,000	5.0 ± 0.6	30.2 ± 1.0	28.9 ± 0.3	49
D2	InP/7ZnS	560	63	360,000	2.2 ± 0.3	11.7 ± 2.5	0.7 ± 0.3	3
D3	InP/4ZnSe/3ZnS	555	61	940,000	2.0 ± 0.2	17.0 ± 1.3	4.2 ± 0.6	40
D4	InP/7ZnSe/3ZnS	560	47	2,400,000	2.3 ± 0.3	16.1 ± 0.2	4.6 ± 0.2	110
A1	InP/3ZnSa	650	69	1,100,000	1.7 ± 0.2	14.6 ± 0.7	1.4 ± 0.2	15

^aUsed as the acceptor QD; all other samples were used as donors.

^bQD composition. The first QD is an alloyed structure that forms a CdSe/ZnS QD with an alloyed interface based on the differential reactivities of the precursor materials; remaining heterostructures formed through SILAR deposition of shells on pre-made cores. The numbers before the shell compositions indicate the number of rounds of SILAR deposition, not final yield of shelling reaction.

^cε₄₀₀ determined using published empirical equations correlating 1s peak position to cores size and ε_1s to map ε to the entire QD absorption spectrum.

^dSizing based on TEM images (n = 76–212).

^eAbsolute quantum yield measurements taken with an integrating sphere.

^fQD brightness in water calculated by multiplying ε₄₀₀ and Ф_H2O and rounding to the nearest thousand.