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. 2021 Jul 16;11:14618. doi: 10.1038/s41598-021-94078-8

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Effect of light radiation on the performance of a-IGZO TFTs. (a) Schematic cross-section of a-IGZO TFTs. (b) Transfer characteristics in dark and after radiation with monochromatic light of varying wavelength (λ) for 500 s. (c) Transfer characteristics and field-effect mobility (μ_FE) as a function of exposure time to deep UV light (λ = 172 nm and intensity of 400 mW/cm²). Deep UV light radiation induces a large negative threshold voltage shift that is accompanied by a subthreshold hump and an increase in subthreshold voltage swing, as well as an increase in μ_FE.