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. 2021 Jul 16;11:14618. doi: 10.1038/s41598-021-94078-8

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Recovery of transfer characteristics of a-IGZO TFTs at (a) 100 °C, (b) 130 °C, and (c) 150 °C after deep UV light (λ = 172 nm) radiation for 500 s. Recovery only occurs at temperature > 100 °C. (d) Threshold voltage shift (ΔV_TH) as a function of recovery time from the deep UV light radiation stress. (e) Plot of the average time constant (τ) as an inverse function of temperature (Arrhenius plot). The activation energy for the recovery process (E_τ = 0.99 eV) is obtained from the slope of the straight line.