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. 2021 Jul 16;11:14618. doi: 10.1038/s41598-021-94078-8

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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XPS results showing O 1 s spectra of thin-film stacks (glass/SiO₂/a-IGZO/SiO₂) before (a–c) and after (d–f) deep UV light exposure at the top surface (a and d), in the bulk (b and e), and at the bottom surface (c and f) of the a-IGZO film. The O 1 s spectrum is deconvoluted into four energy peaks: M–O, V_O, O–H, and Si–O. Peak O–M, which is centered at 529.9 eV, is attributed to O²⁻ ions binding with In, Ga, and Zn atoms—and thus represents the quantity of the oxygen atoms in a fully oxidized stoichiometric environment. The V_O peak at 531.2 eV stems from the deficiently bonded oxygen in the a-IGZO layer containing nonstoichiometric oxide species, such as In₂O_3−x, Ga₂O_3−x, and ZnO_1−x, which are associated with V_O. Peak O–H is related to metal–OH (hydroxyl) bonds and centered at 532.1 eV, while Peak Si–O is related to Si–O bonds and centered at 532.4 eV.