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. 2021 Jul 16;11:14618. doi: 10.1038/s41598-021-94078-8

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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TCAD simulation of the effect of deep UV light radiation on a-IGZO TFTs. (a and b) Schematics representing the TFT models used to simulate TFT characteristics (a) before and (b) after deep UV light radiation. A 2 nm thick a-IGZO film with a donor concentration (n_gd) of 7 × 10¹⁸ cm^-3 is used to simulate the photoionization of neutral oxygen vacancies at the top surface of the a-IGZO film. n_gd for the bulk is 1 × 10¹⁷ cm^-3. (c) Simulated transfer characteristics. (d) Line profile of the electron concentration (n_e) from the top to the bottom surface when V_GS = 10 V. (e and f) Images showing the distribution of n_e in the a-IGZO with a conductive backchannel when (e) V_GS = − 10 V and (f) V_GS = 10 V. The presence of a conductive top surface induces a negative ΔV_TH and the “hump”.