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. 2021 Jul 16;11:14618. doi: 10.1038/s41598-021-94078-8

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Effect of back bias on deep UV light (λ = 172 nm) instability in a-IGZO TFTs. (a and e) Double gate TFT structures used for the investigation with a (a) full and (e) partial back gate (top gate). A transparent top gate (TG) material (IZO) is used to separate the bias from the light-shielding effect. (c to h and f to h) Evolution of transfer characteristics with light exposure time under three bias conditions: (b) and (f) Top gate (TG) sweep, where the TG is swept while grounding the bottom gate as shown by the inset of (f). (c) and (g) BG sweep, where the BG is swept while grounding the TG as shown by the inset of (g). (d) and (h) Double gate (DG) sweep, where TG and BG are shorted as shown by the inset of (h). Grounding or applying a positive back bias after radiation suppresses light instability in a-IGZO TFTs.