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. 2021 Jul 16;11:14618. doi: 10.1038/s41598-021-94078-8

Figure 9.

Figure 9

Threshold voltage shift (ΔVTH) in inverted staggered (single gate) a-IGZO TFTs as a function of deep UV light (λ = 172 nm) exposure time. Reducing the thickness of the a-IGZO from 20 to 7 nm almost completely suppresses the deep UV light instability. a-IGZO film thickness reduction enhances the bottom gate control over the back (top) channel and also decreases the total number of defects.