Table 2.

Raman coherent backscattering parameters for the fractal Si NW arrays. Values of dephasing length ℓ_d1, transport mean free path ℓ_t, analytical transverse localization length ξ _loc and theoretical Raman enhancement E _Raman for Sample 1 and Sample 2. For both samples, the analytical Raman localization length is calculated from the ℓ_t values as (${\xi }_{\mathrm{loc}}={\ell }_{\mathrm{t}}{e}^{\pi k{\ell }_{\mathrm{t}}/2}$), while the theoretical Raman enhancement factor and the transport mean free path ℓ_t, were obtained as fitting parameters from fitting the RCBS cone. Their relative errors are evaluated from the confidence interval of the fitting procedure. The values of ℓ_d1are fixed fitting parameters as obtained by means the relation ℓ_d1 ≈ 2/Δk, with Δk the exchanged wavevector during the Raman process

Si NWs	ℓd1 [µm]	ℓt [µm]	ξ loc [µm]	E Raman
Sample 1	4.4 ± 0.1	0.12 ± 0.01	4.1 ± 0.2	1.80 ± 0.02
Sample 2	5.2 ± 0.1	0.14 ± 0.02	4.2 ± 0.2	1.84 ± 0.06