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. 2021 Jul 13;12(7):821. doi: 10.3390/mi12070821

Figure 4.

Figure 4

Electric field breakdown data used to evaluate a-SiC insulation properties via IV measurement of leakage current from a PPF/a-SiC IDE device. Two-die were tested under dry/wet (PBS) conditions and the average leakage current at ±50 V was 7 nA (dry) and 19 nA (wet). Photograph of IDE device (inset) with 100 µm spacing between PPF mesas (scale bar 500 µm).