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High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) image of focused ion beam (FIB)-cut cross section of a semiconductor grade moderately doped Si(110) wafer. Local etching results in the formation of crystallographically defined etch track pores primarily along {001} directions when HL MACE is performed. Copyright © 2021 Kolasinski, Unger, Ernst and Aindow. Reproduced under Creative Commons Attribution License (CC BY) from Ref. [72].
