Table 1.
Dependence of activation efficiency and electrical properties on the Cp2Mg flow rates.
| Structure | Cp2Mg Source (sccm) |
Mg Doping Concentration (cm−3) |
Hole Concentration (cm−3) |
Mobility (cm2/V-s) |
Resistivity (ohm-cm) |
Activation Efficiency (%) |
|---|---|---|---|---|---|---|
| p-GaN/Al0.3Ga0.7N | 200 | 1.20 × 1019 | (1.25 ± 0.06) × 1017 | 27.54 ± 1.38 | 1.87 ± 0.09 | 1.04 |
| 450 | 2.42 × 1019 | (5.38 ± 0.27) × 1017 | 7.69 ± 0.38 | 1.51 ± 0.08 | 2.22 | |
| 600 | 3.75 × 1019 | (7.49 ± 0.37) × 1017 | 5.63 ± 0.28 | 1.48 ± 0.07 | 2.00 | |
| 750 | 4.87 × 1019 | (7.95 ± 0.40) × 1017 | 4.51 ± 0.23 | 1.74 ± 0.09 | 1.63 | |
| 900 | 6.05 × 1019 | (8.71 ± 0.44) × 1017 | 3.54 ± 0.18 | 2.02 ± 0.10 | 1.44 |