Table 1. Calculated Threshold Energies (in eV) for the Diagonal and Lateral Jumps of the Bi and Sb Dopants as a Function of the Emission Angle of the Impacted Si Atom.

Θ (deg)	0	5	10	15	30	45
Bi (diag.)	13.6	11.6	10.3	9.4	8.3	8.3
Bi (lat.)	13.9	11.8	10.3	9.4	8.2	8.7
Sb (diag.)	13.0	11.2	10.1	9.3	8.3	8.3
Sb (lat.)	13.6	11.6	10.3	9.4	8.2	8.6