Fig. 1. AHE in metallic states of tMBG.
a, b Longitudinal resistivity, ρxx, of device D1 (θ = 1.13∘) for D > 0 (a) and D < 0 (b). ρxx is symmetrized at ∣B∣ = 0.5 T in order to suppress any magnetic hysteresis effects but looks very similar at B = 0 (Supplementary Fig. 3a). c, d ρxx (top) and ρyx (bottom) acquired as B is swept back and forth at ν and D indicated by the labels, and by the red and blue markers in (a), respectively. e, f Hysteresis loop height, Δρyx, as a function of doping at D = 0.47 V/nm (e) and D = 0.39 V/nm (f), as indicated by the black lines in (a). Rapidly oscillating red and blue points near ν = 1 in (e) arise due to the correlated trivial insulating state rather than magnetic ordering (see Supplementary Fig. 8a, b). g, h ρxx (top) and ρyx (bottom) acquired as B is swept back and forth at ν and D indicated by the labels, and by the orange and purple markers in (b), respectively. i, j Δρyx as a function of doping at D = −0.57 V/nm (i) and D = −0.45 V/nm (j), as indicated by the black lines in (b). We note that small oscillation features in ρyx curves are noise, arising due to the low excitation current (1 nA) used in the measurements. ρyx is not antisymmetrized and is offset from zero as a result of mixing with ρxx. All data are acquired at T = 0.3 K.