Table 1.

Typical scanning electron microscope metrology instrument specifications

Minimum predicted feature size	0.1 μm
Image resolution (@ 1.0 kV)	<8.0 nm
Accelerating voltage range	General purpose 0.5 kV to 30 kV In-Line 0.5 kV to ~2.5 kV
Magnification	100 × to 300 000 ×
Wafer size capabilities (in mm)	100, 125, 150, 200
Cleanliness	<2 particles added/pass
Mean time between failure	>1500 h
Availability	>95 %
3S Repeatability (lines and spaces)	Static <5 nm Dynamic <10 nm
3S Repeatability (contact holes and vias)	Static <10 nm Dynamic <20 nm
Wafer throughput	>20/h
Stage speed	>50 mm/s
Pattern recognition—probability of detection	>99 %
Pattern recognition—position uncertainty	±0.2 μm