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. 2021 Aug 11;8(8):210554. doi: 10.1098/rsos.210554

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© 2021 The Authors.

Published by the Royal Society under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/, which permits unrestricted use, provided the original author and source are credited.

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Figure 2. — (a) Transfer curves of Te nanosheets-based FETs. The inset is the OM image of the device. (b) Hall transport measurement of the Te nanosheets. The inset is the OM image of the device with Hall bar geometry. The scale bar in the inset is 10 µm.