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. 2021 Jul 27;125(30):16719–16732. doi: 10.1021/acs.jpcc.1c03877

Figure 9.

Figure 9

XPS of SEI formed at a constant current of 0.03 mA/cm2 (using the procedure depicted in Figure 1a) on exposed Cu (a) C 1s, (b) O 1s, and Li-plated Cu (c) C 1s and (d) O 1s on the d-HCl-Cu film.