Figure 2.

(A) Pictorial representation of the site-controlled growth method of nanowires reported in the first works on nanowire positioning (a) SiO₂ mask formation by electron-beam lithography; (b) removal of Au atoms from the masked region by the lift-off process; (c) Au alloy droplet formation by annealing; (d) removal of SiO₂ mask; (e) MOVPE growth of nanowhiskers; (B) scanning electron micrographs of the first nanowire positioning experiments, varying the dimension of the mask’s openings (a) individually seeded NWs, (b) growth on selected areas (reprinted with permission of Ref. [86]).