Figure 19.
(a) Structure diagram of ITO/WO3/AZO device. (b) The sample was annealed at 600 °C and then irradiated for 30 min, followed by 50 consecutive cycles of volt-ampere characteristic curve in logarithmic form. (c) Energy band structure of ITO/WO3/AZO. (d) Schematic diagram of carrier migration and interfacial tunnel gap formation under light irradiation. Reproduced or adapted from [104].