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. 2021 Aug 22;11(8):2136. doi: 10.3390/nano11082136

Figure 19.

Figure 19

(a) Structure diagram of ITO/WO3/AZO device. (b) The sample was annealed at 600 °C and then irradiated for 30 min, followed by 50 consecutive cycles of volt-ampere characteristic curve in logarithmic form. (c) Energy band structure of ITO/WO3/AZO. (d) Schematic diagram of carrier migration and interfacial tunnel gap formation under light irradiation. Reproduced or adapted from [104].