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. 2021 Aug 9;11(8):2027. doi: 10.3390/nano11082027

Figure 1.

Figure 1

Representative SEM acquisitions of TiO2NPs (a) and HNTs (b) on monocrystalline silicon wafer at the accelerating voltage of 5 kV. Size distribution of TiO2NPs (c), in terms of major and minor axes length, and HNTs size distribution (d), in terms of diameter and lenght dimensions. EDS characterization (accelerating voltage 20 kV) of TiO2NPs (e) and HNTs (f).