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. 2021 Sep 9;11:17983. doi: 10.1038/s41598-021-97479-x

Table 1.

Operating conditions of the 1T-SRAM cell.

Voltage Write “1” Write “0” Read Hold
VBL (V) 1.0 0.2 1.0 0.68
VWL (V) − 1.1 − 1.1 0.0 0.0