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. 2021 Jan 23;8(9):nwab012. doi: 10.1093/nsr/nwab012

Figure 4.

Figure 4.

Electrochemical characterization of 3C-architecture encapsulated SiMP anodes. (a) Optimized initial Coulombic efficiency of SiMP@C-GN with different Si contents. (b) EIS measurements of SiMP@C-GN (Si mass content is 66 wt%), SiMP@C and bare SiMP electrodes in their original states. (c) Rate capabilities of SiMP@C-GN (Si mass content is 66 wt%), SiMP@C and bare SiMP electrodes at current densities of 0.2, 0.5, 1.0, 2.0, 4.0 and 5.0 A g–1. (d) Half-cell discharge capacities of a SiMP@C-GN anode compared with the control samples (SiMP@C and bare SiMP anodes) tested under the same conditions. The charge/discharge current density is 0.2 A g–1 for the first three cycles and 1.0 A g–1 for later cycles. The inset SEM images show the morphology changes of SiMP, SiMP@C and SiMP@C-GN (Si mass content is 66 wt%) electrodes after 100 cycles. (e) Comparison of the SiMP@C-GN anode with other reported anodes (PR-PAA-SiMP [25], Si@Gr [7], mSi@OG@RGO [13], nc-SiMP [26], SiOx/C-CVD [27], Si-SHP/CB [28], SiNP-PANi [29], Si pomegranate [30], SG-Si-c-PAN [31], SiNP-alginate [32], Si/C microspheres [33]) in terms of estimated processing cost, number of cycles and volumetric capacity. (f) Cycling performance of high-mass-loaded SiMP@C-GN and SiMP@C anodes (equal initial areal capacity at 1.0 mA cm–2). All electrodes were first cycled at 0.2 mA cm–2 for the first three cycles and 1.0 mA cm–2 for later cycles.