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. 2020 Apr 6;6:21. doi: 10.1038/s41378-019-0124-8

Table 1.

Comparison of the three concepts for thermal scanning probe lithography: removal, conversion and addition of material

Removal Conversion Addition
Resolution
 Demonstrated 8 nm half-pitch29,128 10 nm feature size81

35 nm110

10 nm117 (with particles)

 Typical 20–50 nm 50–100 nm 100–500 nm
 Limitation Tip shape, temperature Tip shape, temperature Large effective tip radius due to loaded material, substrate wettability, temperature, contact duration
Speed
 Demonstrated 20 mm/s7 1.4 mm/s78 40 µm/s110
 Typical 0.1–1 mm/s 1–200 µm/s 0.1–5 µm/s
 Limitation Actuation frequency, and trade-off between scan speed and position accuracy Reaction kinetics, heat diffusion Mass flow, diffusion
Features and challenges

Closed-loop lithography permits 3D (grayscale) lithography with 1 nm vertical resolution

Sub-10 nm marker-less overlay and field stitching

Long tip lifetime possible (few days patterning), despite potential challenges with tip contamination

New material systems can be experimentally tested very quickly if suitable for conversion

Strong temperature/force dependence can limit the reproducibility

Patterning on hard surfaces can cause severe tip wear

Resolution depends on various parameters that need to be controlled well

Risk of contaminating sample with ink during imaging

Ink supply limited by tip capacity (might require reload of tip)

Applications

Prototyping of all kind of nanodevices and 3D masters

Wide selection of etch transfer, lift-off and other processes for almost any material

Compatible with mix-and-match lithography with integrated laser for increased throughput

Large potential for biological applications that require specific chemical binding

Unique capability to produce nanoscale chemical gradients

Nanodevices that require local change of physical properties like magnetization, ferroelectricity or conductivity

Deposition of various polymers, composites and metals

Direct deposition of polymeric masks for further standard nanodevice processing

Suitable for devices with topographies where negative resist patterns are required

Maturity

Technologically advanced (dedicated machines, cantilevers, softwares, resists, and processes)

Alternative and extension to standard electron beam lithography in particular for materials/devices sensitive to damage from charged particle beams

Wide range of materials that can be thermally modified

Few established processes beyond the individual research groups who developed it

Good calibration and understanding might be required

Exploratory status

Few people with experience

Tip loading, good calibration and understanding of the deposition process are required

Note that the values for resolution and speed need to be interpreted with great care. Best demonstrated values often mean that experiments are pushed to the extreme and at the expense of other criteria, while best values also don’t necessarily mean that these values are already the physical limits. We quote the best demonstrated and typical values found in literature and used for real applications and add an interpretation based on our own experience and assumptions