Removal |
|
|
CSAR 62 |
A commercial EBL resist which can be directly removed by a heated tip. High contamination of the tip |
Personal communication to the author |
Diels-Alder polymer |
Fast (~10 µs) and reversible cross-linking upon heating |
129 |
Fluorocarbon |
Thermomechanical indentation of the thin film (0.5 µm/s) |
130 |
Diphenylalanine nanotubes |
Thermomechanical machining of nanotubes |
Personal communication to the author |
Molecular glasses (various) |
Desorbs from substrate upon heating. High resolution possible. Can be deposited by evaporation. |
48–50 |
Polyaryletherketone (PAEK) |
Thermomechanical indentation in highly cross-linked polymer |
15 |
Polycarbonate (PC) |
Cross-linked PC used for thermal degradation with heated tip (0.5–3 µm/s) |
9,46 |
Pentaerythritol tratranitrate (PETN) |
Thermal degradation of an energetic material leading to much wider structures with higher temperatures |
47 |
Polymethylmethacrylate (PMMA) |
Indentation, thermal degradation (10 µm/s) |
8,11–13,51,131,132 |
PMMA/MA |
Serves usually as underlayer for bilayer lift-off but also possible to remove by heated tip |
Personal communication to the author |
Polyphthalaldehyde (PPA) |
Most used t-SPL resist, clean decomposition at glass point, sub-10- nm resolution, accurate grayscale and high speed demonstrated |
7,29–31,33,36–39,43,52–77 |
Polystyrene (PS) |
Indentation |
16–18,133 |
Polysulfone |
Ripple formation study |
17,134 |
Polythioaminal |
Resist for sublimation via thermal decomposition |
126 |
SU-8 |
Thermomechanical indentation |
135 |
Conversion |
|
|
3-mercaptopropyltriethosysilane (MPTES) |
Deprotection of THP group (3 µm/s) |
83 |
Aminopropyltriethoxysilane (APTES) |
Surface activation |
83 |
AZ 5214E |
Thermally activated crosslinking (10–20 nm/s) |
87,95 |
BiFeO3
|
Thermally induced crystallization of ferroelectric nanodots from sol–gel prepared film |
100 |
Co/Pt |
Thermally-assisted magnetic recording |
136 |
CoFe2O4
|
Thermally induced crystallization of ferromagnetic nanodots from sol-gel prepared film |
101 |
GeSbTe |
Phase-change material crystallized by 100 ns heat pulses and rapid cooling |
21 |
GeTe |
Crystallization of material upon heating (<1 µm/s) |
98 |
Graphene |
Oxidation of graphene with a heated probe in oxygen-containing atmosphere |
87 |
Graphene oxide |
Thermal reduction of graphene oxide for nanoelectronics |
42,45,86 |
Graphene fluoride |
Thermal reduction of graphene fluoride (10–50 nm/s) |
137 |
InSnSb |
Tip-induced crystallization of phase change material |
9 |
p(THP-MA)80-p(PMC-MA)20
|
Thermal deprotection of functional amine groups, chemical gradients possible (<1.4 mm/s) |
32,33,78–82,138,139 |
Poly(tert-butyl acrylate) |
Thermal deprotection of tert-butyl ester groups uncovers carboxylic acid moities (5–500 µm/s) |
84,85 |
PbTiO3 / PbZrTiO3 (PZT) |
Ferroelectric nanostructures from sol-gel precursor (contact duration 0.6 s) |
99 |
Pentacene precursor |
13,6-N-Sulfinylacetamidopentacene, for organic nanoelectronics |
88,92 |
Polyarylenetriazolylene (PArT) precursors |
“Click Chemistry” thermally triggered 1,3-dipolar cycloaddition to fabricate organic semiconductors (16 µm/s) |
94 |
Polyethylene terephthalate (PET) |
Crystallization of amorphous PET by thermal annealing with a heated probe |
140 |
PMMA/BPA/Ag3N |
Thermally triggered exothermal reaction, increases accessible temperature |
141 |
Poly(p-phenyene vinylene) (PPV) precursor |
Nanoscale conducting polymer structures from a precursor film (<80 µm/s) |
42,88–91 |
PVDF-TrFE |
Thermally induced crystallization of ferroelectric nanodots |
102 |
Ru/IrMn/CoFeB |
Anti- and ferromagnetic multilayers to fabricate nanoscale magnetic structures |
103–106 |
TbFe |
Thermally-assisted magnetic recording |
136 |
Titanium |
Thermal oxidation with a heated probe |
87 |
Silk fibroin |
Solubility contrast in water by fast melting of beta sheet crystallites |
97 |
Supramolecular glass |
Supramolecular polymers can reversibly form aggregates upon heating |
96 |
Addition |
|
|
Cu, CuO |
Tip-based chemical vapor deposition from copper acetylacetonate precursor |
124,125 |
Indium |
Direct fabrication of indium oxide nanowires |
116 |
Mercaptohexadecanoic acid (MHA) |
Study of temperature dependence of ink transport |
109 |
Octadecylphosphonic acid (OPA) |
Self-assembled monolayer (1 µm/s) |
111 |
Poly(3-dodecylthiophene) (PDDT) |
Deposition of self-assembled monolayers of a conducting polymer (10 µm/s) |
112–114,117 |
Polyethylene (PE) |
Direct deposition as etching mask and carrier of nanoparticles |
108,117 |
Poly(N-isopropylacrylamide) (PNIPAAm) |
Deposition of functional polymer |
115 |
Poly(methyl methacrylate) (PMMA) |
Use as a mask for XeF2 etching of MoS2 nanoribbons |
120 |
Polystyrene (PS) |
Use as a mask for dry etching |
110,118,121,122 |
PVDF-TrFE |
Direct deposition of a ferroelectric polymer with and without metalorganic additives |
117 |