Table 3.

Fabrication process parameters

Process step	Tool	Parameters	Rate
(1) Thermal oxide etch	PlasmaTherm 790 RIE	Gas: 22.5 SCCM CHF3 Gas: 16 SCCM O2 Pressure: 100 mTorr Power: 200 W	55 nm/min
(2) Anisotropic Si etch	Wet Bench	Concentration: 2 M KOH Concentration: 60 ppm Triton X-100 Surfactant Temperature: 90 °C Agitation: 210 rpm stirring	280 nm/min
(3) PECVD oxide deposition	Trion Orion II PECVD	Temperature: 375 °C Pressure: 900 mTorr Gas: 75 SCCM N2O Gas: 70 SCCM SiH4	60 nm/min
(4) Parylene deposition	SCS Labcoter-2	Furnace temperature: 690 °C Chamber gauge temperature: 135 °C Vaporizer temperature: 175 °C Pressure: 35 mTorr	2 g → 1.47 µm
(5) Pt evaporation	Kurt J. Lesker PVD 75 Electron Beam Evaporator	Pressure: 3 × 10−7 Torr	3 Å/s
(6) Al Evaporation	Kurt J. Lesker PVD 75 Electron Beam Evaporator	Pressure: 3 × 10−7 Torr	5 Å/s
(7) Cr sputtering	CVC Connexion Sputtering System	Pressure: 7 mTorr Power: 50 W RF Gas: 50 SCCM Ar	10 nm/min
(8) Parylene etching	Trion Phantom II RIE	Gas: 14.0 SCCM O2 Pressure: 50 mTorr Power: 50 W RF	250 nm/min
(9) Al sputtering	Perkin Elmer 8 L Sputtering System	Power: 100 W RF Pressure: 5 mT	30 nm/min
(10) PDMS etching	Trion Phantom II RIE	Pressure: 75 mT Gas: 30 SCCM CF4 Gas: 10 SSCM O2 Power: 200 W	200 nm/min
(11) Si etching	Trion Phantom II RIE	Pressure: 25 mTorr Power: 100 W Gas: 30 SCCM SF6	2.3 µm/min