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. 2020 Jun 1;6:35. doi: 10.1038/s41378-020-0139-1

Fig. 7. Device performance analysis in support of VOC sensing mechanism.

Fig. 7

The plots represent a T-CAD simulation of diode structure, current vs. surface carrier concentration for three different voltages. A definite variation of surface carrier concentration with increasing forward bias voltage was observed supporting the proposed sensing mechanism. b Experimental diode current at three voltages in dry nitrogen and dry air