Table 2.

The in-plane stretching modulus C, carrier mobility μ at 300 K, effective mass m^*, based on effective mass method for pristine and ion-implanted graphene.

Type	Carrier	E1 (eV)	C (J m−2)	m* (me)	μ (cm2 V−1·s−1)
Graphene	h	−6.600	385.804	−0.021	4.50 × 105
	e	6.574	385.804	0.021	4.40 × 105
Ga-graphene	h	−6.167	274.608	−0.038	2.72 × 104
	e	−4.339	274.608	0.037	5.73 × 104
Ge-graphene	h	2.710	296.811	−0.073	4.04 × 104
	e	−2.892	296.811	0.115	1.50 × 104
As-graphene	h	−2.130	306.125	−0.244	6.06 × 103
	e	−2.940	306.125	0.113	1.48 × 104