Table 5.

Photon yields (number of photons emitted per charge carrier) measured in the wavelength range [450–1020] nm for the FBK VUV-HD3 and HPK VUV4 SiPMs as a function of the applied over-voltage. The last line of the table represents the photon yields measured in [15,24], respectively.

FBK VUV-HD3		HPK VUV4
${\mathit{V}}_{\mathbf{ov}}$ [V]	Photon Yield [$\mathit{\gamma }\mathbf{/}{\mathit{e}}^{\mathbf{-}}$]	${\mathit{V}}_{\mathbf{ov}}$ [V]	Photon Yield [$\mathit{\gamma }\mathbf{/}{\mathit{e}}^{\mathbf{-}}$]
12.1 ± 1.0	$(4.04\pm 0.02)\times {10}^{-6}$	10.7 ± 1.0	$(8.71\pm 0.04)\times {10}^{-6}$
12.4 ± 1.0	$(4.45\pm 0.02)\times {10}^{-6}$	10.8 ± 1.0	$(8.98\pm 0.06)\times {10}^{-6}$
12.8 ± 1.0	$(5.10\pm 0.02)\times {10}^{-6}$	11.0 ± 1.0	$(9.24\pm 0.05)\times {10}^{-6}$

Photon Yield in [24] (500–1117 nm):$1.2\times {10}^{-5}$ $\gamma /e^{-}$; Photon Yield in [15] [0.5–4.5] mA (413–1087 nm):$2.9\times {10}^{-5}$ $\gamma /e^{-}$.