Figure 4.
Orientation‐dependent gating of conductance. Conductance across SWCNT‐FETs functionalized with a) BLIP241AzFand b) BLIP2213AzF. The 0.1, 0.5, 2, and 10 pmol amounts are equivalent to the following molar concentrations: 10, 50, 200 and 1000 nM respectively. The concentration dependent response for c) BLIP241AzFand d) BLIP2213AzF. Addition of TEM‐1 at different concentrations is shown as vertical arrows on each conductance trace.