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. 2021 Aug 6;60(37):20184–20189. doi: 10.1002/anie.202104044

Figure 4.

Figure 4

Orientation‐dependent gating of conductance. Conductance across SWCNT‐FETs functionalized with a) BLIP241AzFand b) BLIP2213AzF. The 0.1, 0.5, 2, and 10 pmol amounts are equivalent to the following molar concentrations: 10, 50, 200 and 1000 nM respectively. The concentration dependent response for c) BLIP241AzFand d) BLIP2213AzF. Addition of TEM‐1 at different concentrations is shown as vertical arrows on each conductance trace.