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. 2021 Sep 22;12:5599. doi: 10.1038/s41467-021-25912-w

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Optical microscope image of the multiterminal Corbino device with labeled ohmic contacts on the inner edge (1–4), on the outer edge (A–D), as well as a top gate. The smaller image in (b) shows a photograph of a mechanically bonded device. b A base temperature two-terminal conductance gate sweep measurement between contacts A and 1 (between the two edges). c A thermal activation of the bulk resistivity, with the red line representing an Arrhenius fit with an activation energy of 1.11 K. The upper and lower value for the error bars are determined by one standard deviation on the signal measured at the reference resistor. At 25 and 55 mK the upper value is not determined as the standard deviation exceeds the mean value of the signal (schematically indicated by the blue arrows). d Four-terminal measurements on the outer edge, at base temperature, showing perfect dissipationless chiral edge channel transport. e External magnetic field hysteresis loop of V_B-D/I_A-C for temperatures ranging from 25 mK to 25 K. f Longitudinal resistivity measurements collected from an ordinary Hall bar device (with width of 200 μm and aspect ratio 3:1), patterned from the same MBE layer as the Corbino device.