Figure 6.

(a) Color maps of the xx component of the stress tensor (σ_xx) for three 3C-SiC epilayers grown on array of pillars with different geometries. Top: parallelepiped pillars, spaced by 2 µm and with a base width of 5 µm. Center: parallelepiped pillars, spaced by 4.5 µm and with a base width of 2.5 µm. Bottom: T-shape pillars, spaced by 2 µm and with a maximum base width of 5 µm. (b) Plot of the height of the pillars as a function of the width of the pillars that is needed to guarantee a curvature radius of the sample that is larger than 10 m (acceptable for post-processing of 4′ wafers). A (111) Si substrate is considered. (c) SEM image of the T-shape pillars (adapted from Reference [46]).