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. 2021 Sep 16;14(18):5348. doi: 10.3390/ma14185348

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© 2021 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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A pair of triple SFs are generated as a result of the surface depletion caused by an APB during 3C-SiC epitaxy along the [001] z-direction. Under-coordinated atoms from several KMC moments: (a) triple SFs created by an APB; (b–d) three consecutive images illustrating the autonomous kinetics of the APB traveling towards the [110] axis; and two formed triple SFs expanding along the (111) planes. (e) TEM picture of an SF caused by an APB along the epitaxial growth (001) of a 3C-SiC. It expands on the {111} planes autonomously from the APB kinetics. Moreover, the surface depletion is evident at the (001) surface (adapted from Reference [57]).

A pair of triple SFs are generated as a result of the surface depletion caused by an APB during 3C-SiC epitaxy along the [001] z-direction. Under-coordinated atoms from several KMC moments: (a) triple SFs created by an APB; (b–d) three consecutive images illustrating the autonomous kinetics of the APB traveling towards the [110] axis; and two formed triple SFs expanding along the (111) planes. (e) TEM picture of an SF caused by an APB along the epitaxial growth (001) of a 3C-SiC. It expands on the {111} planes autonomously from the APB kinetics. Moreover, the surface depletion is evident at the (001) surface (adapted from Reference [57]).