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. 2021 Sep 16;14(18):5348. doi: 10.3390/ma14185348

Figure 18.

Figure 18

(a) 3C-SiC growth on hexagonal SiC substrates using enhanced sublimation epitaxy. (b) Polarized light optical micrographs of 2.5 mm-thick 3C-SiC layers grown on 2-inch 4.0, 1.5, and 0.9 degrees off-oriented SiC (000-1) substrates. All samples were grown at 1950 °C in vacuum (5 ×10-4 mbar).