Figure 21.

Stacking fault (SF) density of KOH-etched 3C-SiC samples with regard to grown layer thickness using CS-PVT. After an initial rise of SF density due to the defect-rich transition area between CVD and CS, the SF density will decrease with increasing 3C-SiC thickness and even with a value below the value of the used CVD seed. The SF density of the HOYA sample grown by switch-back-epitaxy is presented as a comparison. Adapted from [75].