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. 2021 Sep 29;597(7878):660–665. doi: 10.1038/s41586-021-03867-8

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Extended Data Fig. 7 — a, Finite element simulations of the linear temperature profiles of Au electrodes covered with MoS₂ and r-MoS₂. b, SiN_x as heat spreaders for Au electrodes. Electrical properties of 10-nm-thick, 100-nm-wide and 10-μm-long Au electrodes before and after 16 nm SiN_x film deposition onto the electrodes using plasma-enhanced chemical vapour deposition. In contrast to r-MoS₂, the direct deposition of an ultrathin inorganic film such as SiN_x with a comparable κ to κ_|| of r-MoS₂ negatively affects the performance of the Au electrodes.